gate-to-substrate capacitance

См. также в других словарях:

• Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… …   Wikipedia

• Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

• CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) (   …   Wikipedia

• Clock feedthrough — In analog electronics, Clock feedthrough is the result of the coupling between control signals on the analog switch and analog signal passing through the switch. In digital electronics, clock feedthrough is the coupling of the clock signal to the …   Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• integrated circuit — Electronics. a circuit of transistors, resistors, and capacitors constructed on a single semiconductor wafer or chip, in which the components are interconnected to perform a given function. Abbr.: IC Also called microcircuit. [1955 60] * * * ▪… …   Universalium

• semiconductor device — ▪ electronics Introduction       electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… …   Universalium

• Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

• High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …   Wikipedia

• Power network design (IC) — In integrated circuits, electrical power is distributed to the components of the chip over a network of conductors on the chip. Power network design (IC) includes the analysis and design of such networks. As in all engineering, this involves… …   Wikipedia

• Nanotube nanomotor — A device generating linear or rotational motion using carbon nanotube(s) as the primary component, is termed a nanotube nanomotor. Nature already has some of the most efficient and powerful kinds of nanomotors. Some of these natural biological… …   Wikipedia